High-quality ZnO films grown by atmospheric pressure metal– organic chemical vapor deposition

• Published in: Journal of crystal growth Vol. 283; no. 1-2; pp. 87 - 92
• Main Authors: Wang, Li, Pu, Yong, Fang, Wenqing, Dai, Jiangnan, Chen, Yufeng, Mo, Chunlan, Jiang, Fengyi
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-09-2005; Elsevier
• Subjects: A1. Dislocation density; A1. Exciton; A3. MOCVD; B1. ZnO; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; A1. Exciton; 81.15. Gh; 68. 55 −a; 78.55 −m; A1. Dislocation density; B1. ZnO; A3. MOCVD; Buffer layer; Atomic force microscopy; Bl. ZnO; Inorganic compounds; Films; Atmospheric pressure; Surface morphology; Crystals; Transition element compounds; Photoluminescence; XRD; Al. Exciton; 78.55 -m; MOCVD; CVD; Zinc oxides; Metallic thin films; Ambient temperature; Optical properties; 68. 55 -a Al. Dislocation density; Low temperature
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.05.040

High-quality ZnO films grown by atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD) are demonstrated in this paper. Surface morphology, structural quality and optical properties of the As-grown films were investigated by AFM, double-crystal XRD and photoluminescence (PL) measurements. The effect of buffer layers grown at different temperature on the film quality was studied. It was found that the low-temperature buffer layer was effective to improve the surface morphology, but was not effective to improve the structural quality. On the other hand, the high-temperature buffer layer can greatly improve the structural quality, but yields a relatively rougher surface. Both the samples deposited using either a low-temperature or high-temperature buffer layer showed strong UV luminescence at room-temperature. A fine structure of free excitons was observed at 11K in the sample with a high-temperature buffer layer.