From Si nanotubes to nanowires: Synthesis, characterization, and self-assembly

• Published in: Journal of crystal growth Vol. 277; no. 1; pp. 143 - 148
• Main Authors: Qiu, T., Wu, X.L., Mei, Y.F., Wan, G.J., Chu, Paul K., Siu, G.G.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-04-2005; Elsevier
• Subjects: A1. Nanostructures; A2. Electrochemical growth; B2. Semiconducting silicon; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Nanotubes; Physics; Quantum wires; Self-assembly; 61.46.+w; 62.25.+g; A2. Electrochemical growth; 81.07.−b; A1. Nanostructures; B2. Semiconducting silicon; Scanning electron microscopy; 61.46. +w; Inorganic compounds; Semiconductor materials; 81.07.-b A2. Electrochemical growth; Al. Nanostructures; Nanotubes; Experimental study; Interconnections; Self-assembly; Aqueous solutions; Crystal growth from solutions; Electrodeposition; Silicon; Nanowires; Nanostructured materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.01.095

Through electroless silver deposition, we have successfully fabricated Si nanowires (SiNWs) in a conventional vessel containing aqueous HF and AgNO
3 solution. Their growth mechanisms are analyzed on the basis of a self-assembled localized microscopic electrochemical cell model. A series of scanning electron microscope observations reveal the detailed growth process of the SiNWs. The formation of intermediate Si nanostructures (undetached Si nanotubes) is suggested to be responsible for the growth of triangular shaped SiNWs. The shape and structure of the SiNWs and intermediate undetached Si nanotubes are promising characteristics for applications in interconnection and basic components for future nanoelectronic and optoelectronic devices.