Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si film

The effects of selective Si + ion implantation on excimer laser annealing (ELA) of PECVD a-Si thin film were investigated. The selective Si + ion implantation was employed to amorphize a-Si film locally and the lateral grain growth was successfully induced. In the selectively implanted region, the t...

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Bibliographic Details

Published in:	Journal of non-crystalline solids Vol. 299; pp. 715 - 720
Main Authors:	Lee, Min-Cheol, Park, Kee-Chan, Song, In-Hyuk, Han, Min-Koo
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-04-2002
Subjects:	C290 81.40.E L100 I230
Online Access:	Get full text
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