Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si film

• Published in: Journal of non-crystalline solids Vol. 299; pp. 715 - 720
• Main Authors: Lee, Min-Cheol, Park, Kee-Chan, Song, In-Hyuk, Han, Min-Koo
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-04-2002
• Subjects: C290; 81.40.E; L100; I230
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/S0022-3093(01)00976-0

The effects of selective Si
+ ion implantation on excimer laser annealing (ELA) of PECVD a-Si thin film were investigated. The selective Si
+ ion implantation was employed to amorphize a-Si film locally and the lateral grain growth was successfully induced. In the selectively implanted region, the threshold excimer laser energy for a-Si melting was
85
mJ/cm
2
while that of the implanted region was
105
mJ/cm
2
, which may be attributed to the fact that high-energy implantation with high density may amorphize a-Si film effectively and may weaken atomic bonding energy in the implanted a-Si film. Periodically arranged lateral grains were successfully formed near the implanted region and grain size was up to
1
μm
.