Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si film

Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si film

The effects of selective Si + ion implantation on excimer laser annealing (ELA) of PECVD a-Si thin film were investigated. The selective Si + ion implantation was employed to amorphize a-Si film locally and the lateral grain growth was successfully induced. In the selectively implanted region, the t...

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Published in:Journal of non-crystalline solids Vol. 299; pp. 715 - 720
Main Authors: Lee, Min-Cheol, Park, Kee-Chan, Song, In-Hyuk, Han, Min-Koo
Format: Journal Article
Language:English
Published: Elsevier B.V 01-04-2002
Subjects:
C290
81.40.E
L100
I230
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Abstract The effects of selective Si + ion implantation on excimer laser annealing (ELA) of PECVD a-Si thin film were investigated. The selective Si + ion implantation was employed to amorphize a-Si film locally and the lateral grain growth was successfully induced. In the selectively implanted region, the threshold excimer laser energy for a-Si melting was 85 mJ/cm 2 while that of the implanted region was 105 mJ/cm 2 , which may be attributed to the fact that high-energy implantation with high density may amorphize a-Si film effectively and may weaken atomic bonding energy in the implanted a-Si film. Periodically arranged lateral grains were successfully formed near the implanted region and grain size was up to 1 μm .
AbstractList The effects of selective Si + ion implantation on excimer laser annealing (ELA) of PECVD a-Si thin film were investigated. The selective Si + ion implantation was employed to amorphize a-Si film locally and the lateral grain growth was successfully induced. In the selectively implanted region, the threshold excimer laser energy for a-Si melting was 85 mJ/cm 2 while that of the implanted region was 105 mJ/cm 2 , which may be attributed to the fact that high-energy implantation with high density may amorphize a-Si film effectively and may weaken atomic bonding energy in the implanted a-Si film. Periodically arranged lateral grains were successfully formed near the implanted region and grain size was up to 1 μm .
Author Song, In-Hyuk
Han, Min-Koo
Lee, Min-Cheol
Park, Kee-Chan
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Snippet The effects of selective Si + ion implantation on excimer laser annealing (ELA) of PECVD a-Si thin film were investigated. The selective Si + ion implantation...
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