Effect of the target shuttering on the characteristics of the Ta–Si–N thin films by reactive magnetron co-sputtering

• Published in: Surface & coatings technology Vol. 204; no. 6; pp. 1071 - 1075
• Main Authors: Chung, C.K., Chen, T.S., Nautiyal, A., Chang, N.W., Hung, S.T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 25-12-2009; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Hardness; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Microstructure; Physics; Production techniques; Resistivity; Surface treatment; Surface treatments; Target shuttering; Ta–Si–N; Target shuttering; Microstructure; Hardness; Resistivity; Ta–Si–N; Electrical conductivity; Electrical properties; Ta-Si-N; Surface treatments; Sputtering; Thin films; Magnetrons; Physical vapor deposition; Reactive sputtering
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2009.06.031

The Ta–Si–N thin films were prepared using a reactive magnetron co-sputtering with and without an alternating target shutter control at different N
2 flow ratios (FN
2%
=
FN2/(FAr
+
FN
2)
×
100%) of 3–20%. The evolution of microstructure, composition, morphology, resistivity, and nanomechanical properties of Ta–Si–N films was characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDS), scanning electronic microscopy, four-point probe technique and nanoindentation, respectively. The broad XRD peaks of Ta–Si–N films with and without target shuttering at low 3–10 FN
2% showed the microstructure was quasi-amorphous i.e. nanocrystalline grains embedded in an amorphous matrix. The quasi-amorphous Ta–Si–N without target shuttering was transformed into the polycrystalline phase at 20 FN
2% while that with target shuttering still remained in quasi-amorphous microstructure due to the increased Si content. The resistivity of quasi-amorphous Ta–Si–N films with and without target shuttering at 3–10 FN
2% ranged in 262–385
μΩ cm while that of Ta–Si–N films at 20 FN
2% was much higher at 976–9925
μΩ cm. The hardness of quasi-amorphous Ta–Si–N films with and without target shuttering at 3–10 FN
2% ranged from 14.3 to 18.5
GPa while that of polycrystalline Ta–Si–N film was about 10.3
GPa. Quasi-amorphous Ta–Si–N films had much lower resistivity, higher nanohardness and smooth morphology compared to the polycrystalline film.