Highly‐Directional, Highly‐Efficient Solution‐Processed Light‐Emitting Diodes of All‐Face‐Down Oriented Colloidal Quantum Well Self‐Assembly

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 19; no. 29; pp. e2206582 - n/a
• Main Authors: Baruj, Hamed Dehghanpour, Bozkaya, Iklim, Canimkurbey, Betul, Isik, Ahmet Tarik, Shabani, Farzan, Delikanli, Savas, Shendre, Sushant, Erdem, Onur, Isik, Furkan, Demir, Hilmi Volkan
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01-07-2023
• Subjects: all‐solution‐processed light‐emitting diodes (LEDs); colloidal quantum wells (CQWs); colloidal‐light‐emitting diodes (LEDs); Colloiding; Dipole moments; Efficiency; Emitters; Light emitting diodes; Nanotechnology; Optical transition; orientation‐controlled films; Quantum efficiency; Quantum wells; Self-assembly; self-assembly; all-solution-processed light-emitting diodes (LEDs); orientation-controlled films; colloidal-light-emitting diodes (LEDs); colloidal quantum wells (CQWs)
• ISSN: 1613-6810; 1613-6829
• DOI: 10.1002/smll.202206582

Semiconductor colloidal quantum wells (CQWs) provide anisotropic emission behavior originating from their anisotropic optical transition dipole moments (TDMs). Here, solution‐processed colloidal quantum well light‐emitting diodes (CQW‐LEDs) of a single all‐face‐down oriented self‐assembled monolayer (SAM) film of CQWs that collectively enable a supreme level of IP TDMs at 92% in the ensemble emission are shown. This significantly enhances the outcoupling efficiency from 22% (of standard randomly‐oriented emitters) to 34% (of face‐down oriented emitters) in the LED. As a result, the external quantum efficiency reaches a record high level of 18.1% for the solution‐processed type of CQW‐LEDs, putting their efficiency performance on par with the hybrid organic‐inorganic evaporation‐based CQW‐LEDs and all other best solution‐processed LEDs. This SAM‐CQW‐LED architecture allows for a high maximum brightness of 19,800 cd m−2 with a long operational lifetime of 247 h at 100 cd m−2 as well as a stable saturated deep‐red emission (651 nm) with a low turn‐on voltage of 1.7 eV at a current density of 1 mA cm−2 and a high J90 of 99.58 mA cm−2. These findings indicate the effectiveness of oriented self‐assembly of CQWs as an electrically‐driven emissive layer in improving outcoupling and external quantum efficiencies in the CQW‐LEDs.
All solution‐processed light‐emitting diodes having stable saturated deep‐red emission (651 nm) are fabricated using single all‐face‐down oriented self‐assembled monolayer (SAM) film of CQWs with a high external quantum efficiency of 18.1% and a maximum brightness of 19 800 cd m−2. The SAM‐ CQWs films significantly boost the outcoupling efficiency from 22% of standard randomly‐oriented emitters to 34% in the LED.