Fast characterisation of InAs quantum dot structures using AFM

• Published in: Journal of crystal growth Vol. 264; no. 1; pp. 26 - 30
• Main Authors: Basnar, B., Hirner, H., Gornik, E., Strasser, G.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-03-2004; Elsevier
• Subjects: A1. Atomic force microscopy; B2. Semiconducting III–V materials; B3. Quantum dot devices; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron, ion, and scanning probe microscopy; Exact sciences and technology; Materials science; Methods of nanofabrication; Physics; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc; Self-assembly; Structure of solids and liquids; crystallography; A1. Atomic force microscopy; 85.30.Vw (QDS); B3. Quantum dot devices; 07.79.Lh (AFM); B2. Semiconducting III–V materials; 81.05.Ea (III–V); Atomic force microscopy; Inorganic compounds; Stacking sequence; Quantum dots; B2. Semiconducting III V materials; Cleaving; Binary compounds; Mapping; Etching; Crystal growth from vapors; Experimental study; Indium arsenides; Self-assembly; Molecular beam epitaxy; 81.05.Ea (III-V) A Atomic force microscopy; Cross sections; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.12.026

We present a fast and straightforward method for the cross-sectional analysis of self-assembled InAs quantum dots using atomic force microscopy. The new approach needs a minimum amount of time and sample preparation (cleaving and, if necessary, etching with a solution of hydroxylamine/hydrogen-peroxide) to obtain the cross-sectional dot density and information on the degree of stacking, which are important parameters in the production of self-assembled quantum dot devices, and provides the means for fast cross-sectional wafer mapping.