The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

• Published in: Journal of crystal growth Vol. 261; no. 2; pp. 427 - 432
• Main Authors: Forbes, D.V., Corbett, P.B., Hansen, D.M., Goodnough, T.J., Zhang, L., Myli, K., Yeh, J.-Y., Mawst, L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 19-01-2004; Elsevier
• Subjects: A3. Metalorganic vapor phase epitaxy; A3. Selective area epitaxy; B1. GaAs; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vapor phase epitaxy; growth from vapor phase; 81.05.D; A3. Metalorganic vapor phase epitaxy; A3. Selective area epitaxy; 81.15; B1. GaAs; Scanning electron microscopy; Mask effect; Gallium arsenides; Inorganic compounds; Pressure effects; Growth rate; Selective area; Binary compounds; VPE; Crystal growth from vapors; Experimental study; 81.15 A3. Metalorganic vapor phase epitaxy; MOVPE method; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.11.038

Selective area epitaxy (SAE) is an established means to control the lateral size and height of epitaxial features. An enhanced growth rate is observed to be a function of mask dimensions. In this study, the effects of reactor pressure and configuration on the SAE of GaAs were studied. Using a SiO
2 mask in a dual stripe configuration, the growth rate enhancement and mesa shape were measured at reactor pressures ranging from 50 to 600
Torr. Results are obtained using a close-coupled showered (CCS) reactor design and compared to a conventional horizontal reactor. The CCS reactor demonstrates a wide range of pressure for stable operation, which has notable advantages for SAE.