Impact of Nitrogen Implantation in Lightly Doped Drain (NIL) on Deep Sub-Micron CMOS Devices

• Published in: Japanese Journal of Applied Physics Vol. 39; no. 4S; pp. 2141 - 2146
• Main Authors: Hong, S-K, Lee, S-G, Lee, K-H, Ahn, J-G, Son, J-H, Kang, D-G
• Format: Journal Article
• Language: English
• Published: 2000
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.39.2141

In this study, we investigate the device characteristics of
lightly doped drain (LDD) metal-oxide-semiconductor field effect
transistors (MOSFETs) with nitrogen implantation in the gate
overlapped LDD region. As expected, the hot carrier lifetime under
drain avalanche hot carrier (DAHC) stress condition is sufficiently
improved in nMOSFETs with nitrogen implantation as part of the LDD
(NIL) technique. However, the nitrogen-enhanced short channel effect
is observed. The function of nitrogen atoms in pMOS devices has
theopposite characteristic. In addition, the effective channel
lengths shift in opposite directions in nMOSFET and
pMOSFET. Off-state currents of NIL nMOSFET are degraded, resulting
in the deterioration of the short channel length margin
characteristic, while the short channel length margin is improved in
NIL pMOSFET.