Ultrafast Waveguiding Quantum Dot Scintillation Detector

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 954; no. C; p. 161472
• Main Authors: Dropiewski, K., Minns, A., Yakimov, M., Tokranov, V., Murat, P., Oktyabrsky, S.
• Format: Journal Article
• Language: English
• Published: Netherlands Elsevier B.V 21-02-2020; Elsevier
• Subjects: GaAs; InAs; Molecular beam epitaxy; Quantum Dot; Scintillation detector; Scintillator; Molecular beam epitaxy; Scintillator; Quantum Dot; Scintillation detector; InAs; GaAs
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2018.10.150

Picosecond timing of energetic charged particles and photons is a challenge for many high-energy physics and medical applications. InAs Quantum Dots (QDs) embedded in GaAs matrix are expected to have unsurpassed scintillation properties. The advantages come from highly efficient energy conversion, as well as from fast electron capture and radiative recombination in QDs. We present design considerations and demonstration of an ultrafast, high photon yield room-temperature semiconductor scintillator. Due to the high refractive index of GaAs, the scintillator is fabricated in the form of a 20μm thick planar waveguide with an integrated InGaAs photodiode. QD luminescence of about 60% efficiency at room temperature has been shown, and modal attenuation stabilized at 1 cm−1. Scintillation responses from 5.5 MeV alpha particles show an extremely fast decay time of 280 ps, a collection efficiency of 11% and a time resolution of 60 ps. This data confirms the unique potential properties of this scintillation detector.
•InAs quantum dot photoluminescence has 60% efficiency at room temperature.•Attenuation in the GaAs waveguide stabilizes to a coefficient of  1 cm−1•Alpha particle scintillation response with 280 ps decay time.•11% collection efficiency and 60 ps resolution on integrated InGaAs photodiode.