High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

• Published in: Journal of electronic materials Vol. 32; no. 5; pp. 364 - 370
• Main Authors: ZHANG, J. P, WANG, H. M, ASIF KHAN, M, SUN, W. H, ADIVARAHAN, V, WU, S, CHITNIS, A, CHEN, C. Q, SHATALOV, M, KUOKSTIS, E, YANG, J. W
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01-05-2003
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Deposition technology; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Atomic layer method; Inorganic compounds; Ultrahigh quality; Epitaxy; Roughness; Surfaces; Light emitting diodes; Crystal growth from vapors; Experimental study; Crystal perfection; submilliwatt; Template; Thin films; CVD; Microelectronic fabrication; Deep-UV-LED; Morphology; Aluminium nitrides; Microstructure; AlN epilayers; III-V semiconductors
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-003-0159-2

Authors report the pulsed atomic-layer epitaxy (PALE) of ultrahigh quality AlN epilayers over basal-plane sapphire substrates and their use as templates to grow high-quality AlGaN layers with Al content ranging from 0.3 to 1. Symmetric/asymmetric XRD and RT photoluminescence (PL) measurements were used to establish the high structural and optical quality. The XRD (002) and (114) rocking-curve FWHM values of the PALE-grown AlN epilayers were less than 60 and 250 arcsec, resp. Using these ultrahigh quality layers as templates, Si-doped AlGaN layers with a large Al content from 30% to 100% were grown and used for milliwatt power sub-280-nm, deep UV light-emitting diodes. 20 refs.