Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire

• Published in: Thin solid films Vol. 516; no. 16; pp. 5571 - 5576
• Main Authors: Sun, S., Tompa, G.S., Rice, C., Sun, X.W., Lee, Z.S., Lien, S.C., Huang, C.W., Cheng, L.C., Feng, Z.C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 30-06-2008; Elsevier Science
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Raman scattering; Synchrotron radiation; Theory and models of film growth; X-ray diffraction; ZnO; X-ray diffraction; ZnO; Raman scattering; MOCVD; Synchrotron radiation; Photoluminescence; Doping; Line widths; XRD; Raman spectroscopy; Surface states; Thin films; Optical transmission; Growth mechanism; Zinc oxide; Absorption spectra; Carrier density; X-ray photoelectron spectra; Crystal structure
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2007.07.030

A new type of large area metal organic chemical vapor deposition (MOCVD) system for the growth of high quality and large size ZnO materials is introduced. Materials properties of the un-doped, n- and p-doped ZnO epi-films grown on sapphire substrates by this MOCVD system are studied by various techniques, including high resolution X-ray diffraction (XRD), UV–Visible optical transmission (OT), photoluminescence (PL) and photoluminescence excitation (PLE), synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS). The wurtzite (w) ZnO crystal structures grown with primary (0002) orientation were identified. Results have shown the high crystalline quality of MOCVD-grown ZnO films, indicated by the narrow XRD, PL and Raman line widths, strong PL signals, sharp OT edge and smooth surface. In particular, high p-type carrier concentration of >
10
17 cm
−
3
have been achieved besides the good n-type doping in ZnO.