Spontaneous evolution of nanotips on silicon surface below the laser ablation threshold
► Spontaneous evolution of 2D array of Si nanotips under laser irradiation of silicon surface. ► The equidistant nanotips are organized into a square, and the “ V”-shaped patterns. ► The nanotips evolve from the nonlinear flow instability of molten Si layer. ► These localized structures may be ident...
Saved in:
Published in: | Applied surface science Vol. 257; no. 17; pp. 7851 - 7855 |
---|---|
Main Authors: | , , , |
Format: | Journal Article |
Language: | English |
Published: |
Amsterdam
Elsevier B.V
15-06-2011
Elsevier |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | ► Spontaneous evolution of 2D array of Si nanotips under laser irradiation of silicon surface. ► The equidistant nanotips are organized into a square, and the “
V”-shaped patterns. ► The nanotips evolve from the nonlinear flow instability of molten Si layer. ► These localized structures may be identified as the lump solitons.
A low power density single-pulse laser irradiation of the Si surface has been used for the study of formation and self-organization of silicon nanotips. A two dimensional regular array of hillock-like nanotips has been created in the central region, a disturbed array comprising crossed lines of hillocks in the near-central region, and the “
V”-shaped array in the peripheral region. Therefore, the long-range organization of hillocks changes from the center toward the periphery, following the Gaussian-like laser power profile. The evolution of hillocks due to the flow instability of molten silicon is equivalent to the instability of a liquid layer falling down a vertical plate. The novel result is that the hillock-like soliton structures can be identified with the lump solitons resulting from the nonlinear hydrodynamic instability evolution. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2011.04.045 |