Thin film poly-Si formation by Cat-CVD method and its application for solar cells

• Published in: Thin solid films Vol. 395; no. 1-2; pp. 315 - 319
• Main Authors: Niira, K, Senta, H, Hakuma, H, Komoda, M, Okui, H, Fukui, K, Arimune, H, Shirasawa, K
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 03-09-2001; Elsevier Science
• Subjects: Applied sciences; Energy; Exact sciences and technology; Natural energy; Photovoltaic conversion; Poly-Si; Solar cell; Solar cells. Photoelectrochemical cells; Solar energy; Solar cell; Poly-Si; Thin film device; Voltage current curve; Polycrystal; Active layer; Spin density; Silicon; Manufacturing; Electron paramagnetic resonance; Photoconductivity; Chemical vapor deposition; Catalyst
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(01)01286-X

Poly-Si thin film which has an ESR spin density of 6.9 E16/cm3 was obtained by Cat-CVD with a deposition rate of 5.4 Å/s at a relatively high deposition pressure (approx. 30 Pa) with a high hydrogen dilution (SiH4/H2=0.05). The low ESR spin density films were applied to solar cells as a photo-active layer. Although the dark V–I curves of the cell showed diode characteristics, the photo V–I curves showed very small photo-current densities, lower than 0.5 mA/cm2. A large amount of higher order silane molecules at the present high deposition pressure might be one of the causes of this small photo-current density, as well as grain boundary recombination and an incubation layer at the first stage of film deposition.