MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

• Published in: APL materials Vol. 9; no. 6
• Main Authors: Sundaram, Suresh, Vuong, Phuong, Mballo, Adama, Ayari, Taha, Karrakchou, Soufiane, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
• Format: Journal Article
• Language: English
• Published: AIP Publishing 01-06-2021
• Subjects: Engineering Sciences; Scanning electron microscopy; Optoelectronics; Semiconductors; Light emitting diodes; Nanowires; Review; Phase transitions; Heterostructures; Nanorods
• ISSN: 2166-532X; 2166-532X
• DOI: 10.1063/5.0049306

We summarize our recent progress in Metal organic vapor phase epitaxy (MOVPE) van der Waals epitaxy of wafer-scale 2D layered hexagonal boron nitride (h-BN) on sapphire and subsequently grown III-N materials. This one step growth process allows for mechanical transfer of GaN-based devices from h-BN on sapphire to various supports. We first review the growth of h-BN on unpatterned and patterned sapphire templates. Second, we describe h-BN growth on dielectric pre-patterned sapphire templates, which enables dicing-free GaN-based device structures’ pick-and-place heterogenous integration of III-N devices. Third, we review the growth of self-assembled 1D GaN-based nanowire light emitting diode (LED) structures on layered 2D h-BN for mechanical transfer of nanowire LEDs. Together, these results illustrate the potential of wafer-scale van der Waals h-BN MOVPE to enhance the III-N device functionality and to improve III-N processing technology.