Total dose effects in composite nitride-oxide films
Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs g...
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Published in: | IEEE transactions on nuclear science Vol. 47; no. 6; pp. 2297 - 2304 |
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Main Authors: | , , , , , , , , |
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01-12-2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses. |
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AbstractList | Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 to 183 nm and oxide thicknesses from 5 to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses. (Author) Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses. Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses |
Author | Gasiot, G. Featherby, M. Galloway, K.F. Li, Y.F. Schrimpf, R.D. Fleetwood, D.M. Sung-Chul Lee Raparla, A. Johnson, D. |
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Cites_doi | 10.1109/23.819124 10.1063/1.346524 10.1109/TNS.1986.4334581 10.1063/1.90942 10.1063/1.1653817 10.1109/TNS.1978.4329517 10.1063/1.334071 10.1063/1.341499 10.1109/23.556852 |
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Snippet | Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A... Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 to 183 nm and oxide thicknesses from 5 to 30 nm are studied. A model... |
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SubjectTerms | Capacitors Degradation Dielectric thin films Electron traps Ionizing radiation MOSFETs Nitrides Oxides Power transistors Radiation effects Silicon compounds Threshold voltage |
Title | Total dose effects in composite nitride-oxide films |
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