Total dose effects in composite nitride-oxide films

Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs g...

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Published in:IEEE transactions on nuclear science Vol. 47; no. 6; pp. 2297 - 2304
Main Authors: Sung-Chul Lee, Raparla, A., Li, Y.F., Gasiot, G., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Featherby, M., Johnson, D.
Format: Journal Article
Language:English
Published: New York IEEE 01-12-2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Abstract Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses.
AbstractList Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 to 183 nm and oxide thicknesses from 5 to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses. (Author)
Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses.
Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses
Author Gasiot, G.
Featherby, M.
Galloway, K.F.
Li, Y.F.
Schrimpf, R.D.
Fleetwood, D.M.
Sung-Chul Lee
Raparla, A.
Johnson, D.
Author_xml – sequence: 1
  surname: Sung-Chul Lee
  fullname: Sung-Chul Lee
  email: lees4@vuse.vanderbilt.edu
  organization: Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
– sequence: 2
  givenname: A.
  surname: Raparla
  fullname: Raparla, A.
– sequence: 3
  givenname: Y.F.
  surname: Li
  fullname: Li, Y.F.
– sequence: 4
  givenname: G.
  surname: Gasiot
  fullname: Gasiot, G.
– sequence: 5
  givenname: R.D.
  surname: Schrimpf
  fullname: Schrimpf, R.D.
– sequence: 6
  givenname: D.M.
  surname: Fleetwood
  fullname: Fleetwood, D.M.
– sequence: 7
  givenname: K.F.
  surname: Galloway
  fullname: Galloway, K.F.
– sequence: 8
  givenname: M.
  surname: Featherby
  fullname: Featherby, M.
– sequence: 9
  givenname: D.
  surname: Johnson
  fullname: Johnson, D.
BookMark eNqF0UtLAzEQAOAgFWyrB6-eFgTFw9a8NzlK8QUFL_Uc0mQWUnY3dbMF_fdGt3jwoJcZhvkYZpgZmnSxA4TOCV4QgvUtZQuNWSXVEZoSIVRJRKUmaIoxUaXmWp-gWUrbXHKBxRSxdRxsU_iYoIC6BjekInSFi-0upjBA0YWhDx7K-J5jUYemTafouLZNgrNDnqPXh_v18qlcvTw-L-9WpWNSDaUjfmM3HHxFgDkuqeaVtJ5pUB48WGW14Fpoh52QDFdOY6jz7pYCcdhjNkfX49xdH9_2kAbThuSgaWwHcZ-MJlxyTinJ8upPSZVUXBH9P5SSCC5Zhpe_4Dbu-y6fawjGlDONv9XNqFwfU-qhNrs-tLb_yMh8_cNQZsZ_ZHsx2gAAP-7Q_AR5uYTr
CODEN IETNAE
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10.1063/1.346524
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ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000
DBID RIA
RIE
AAYXX
CITATION
7QF
7QL
7QQ
7SC
7SE
7SP
7SR
7T7
7TA
7TB
7U5
7U9
8BQ
8FD
C1K
F28
FR3
H8D
H94
JG9
JQ2
KR7
L7M
L~C
L~D
M7N
P64
DOI 10.1109/23.903768
DatabaseName IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library Online
CrossRef
Aluminium Industry Abstracts
Bacteriology Abstracts (Microbiology B)
Ceramic Abstracts
Computer and Information Systems Abstracts
Corrosion Abstracts
Electronics & Communications Abstracts
Engineered Materials Abstracts
Industrial and Applied Microbiology Abstracts (Microbiology A)
Materials Business File
Mechanical & Transportation Engineering Abstracts
Solid State and Superconductivity Abstracts
Virology and AIDS Abstracts
METADEX
Technology Research Database
Environmental Sciences and Pollution Management
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
Aerospace Database
AIDS and Cancer Research Abstracts
Materials Research Database
ProQuest Computer Science Collection
Civil Engineering Abstracts
Advanced Technologies Database with Aerospace
Computer and Information Systems Abstracts – Academic
Computer and Information Systems Abstracts Professional
Algology Mycology and Protozoology Abstracts (Microbiology C)
Biotechnology and BioEngineering Abstracts
DatabaseTitle CrossRef
Materials Research Database
Technology Research Database
Computer and Information Systems Abstracts – Academic
Mechanical & Transportation Engineering Abstracts
ProQuest Computer Science Collection
Computer and Information Systems Abstracts
Materials Business File
Environmental Sciences and Pollution Management
Aerospace Database
Engineered Materials Abstracts
Bacteriology Abstracts (Microbiology B)
Algology Mycology and Protozoology Abstracts (Microbiology C)
AIDS and Cancer Research Abstracts
Industrial and Applied Microbiology Abstracts (Microbiology A)
Advanced Technologies Database with Aerospace
ANTE: Abstracts in New Technology & Engineering
Civil Engineering Abstracts
Aluminium Industry Abstracts
Virology and AIDS Abstracts
Electronics & Communications Abstracts
Ceramic Abstracts
METADEX
Biotechnology and BioEngineering Abstracts
Computer and Information Systems Abstracts Professional
Solid State and Superconductivity Abstracts
Engineering Research Database
Corrosion Abstracts
DatabaseTitleList Technology Research Database

Technology Research Database
Solid State and Superconductivity Abstracts
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library Online
  url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1558-1578
EndPage 2304
ExternalDocumentID 2636840081
10_1109_23_903768
903768
Genre orig-research
GroupedDBID .DC
.GJ
0R~
29I
3O-
4.4
53G
5GY
5RE
5VS
6IK
8WZ
97E
A6W
AAJGR
AASAJ
ABQJQ
ABVLG
ACGFO
ACGFS
ACIWK
ACNCT
ACPRK
AENEX
AETEA
AETIX
AFRAH
AI.
AIBXA
AKJIK
ALLEH
ALMA_UNASSIGNED_HOLDINGS
ASUFR
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
DU5
EBS
EJD
F5P
HZ~
H~9
IAAWW
IBMZZ
ICLAB
IDIHD
IFIPE
IFJZH
IPLJI
JAVBF
LAI
M43
MS~
O9-
OCL
P2P
RIA
RIE
RIG
RNS
TAE
TN5
VH1
VOH
XFK
ZA5
AAYXX
CITATION
7QF
7QL
7QQ
7SC
7SE
7SP
7SR
7T7
7TA
7TB
7U5
7U9
8BQ
8FD
C1K
F28
FR3
H8D
H94
JG9
JQ2
KR7
L7M
L~C
L~D
M7N
P64
ID FETCH-LOGICAL-c368t-c1dbab4ed71e3c4629476ad39e8dedea8a954959c0c56307c90ef037a2e1c0d03
IEDL.DBID RIE
ISSN 0018-9499
IngestDate Sat Aug 17 01:58:49 EDT 2024
Fri Aug 16 04:20:35 EDT 2024
Fri Aug 16 01:01:13 EDT 2024
Thu Oct 10 20:15:18 EDT 2024
Thu Sep 26 16:03:07 EDT 2024
Wed Jun 26 19:26:10 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 6
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c368t-c1dbab4ed71e3c4629476ad39e8dedea8a954959c0c56307c90ef037a2e1c0d03
Notes SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
PQID 1002439063
PQPubID 23500
PageCount 8
ParticipantIDs proquest_miscellaneous_28684819
crossref_primary_10_1109_23_903768
ieee_primary_903768
proquest_miscellaneous_26615463
proquest_miscellaneous_914644221
proquest_journals_1002439063
PublicationCentury 2000
PublicationDate 2000-12-01
PublicationDateYYYYMMDD 2000-12-01
PublicationDate_xml – month: 12
  year: 2000
  text: 2000-12-01
  day: 01
PublicationDecade 2000
PublicationPlace New York
PublicationPlace_xml – name: New York
PublicationTitle IEEE transactions on nuclear science
PublicationTitleAbbrev TNS
PublicationYear 2000
Publisher IEEE
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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References_xml – ident: ref5
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– ident: ref12
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– ident: ref3
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– ident: ref10
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– ident: ref2
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SSID ssj0014505
Score 1.7302845
Snippet Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A...
Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 to 183 nm and oxide thicknesses from 5 to 30 nm are studied. A model...
SourceID proquest
crossref
ieee
SourceType Aggregation Database
Publisher
StartPage 2297
SubjectTerms Capacitors
Degradation
Dielectric thin films
Electron traps
Ionizing radiation
MOSFETs
Nitrides
Oxides
Power transistors
Radiation effects
Silicon compounds
Threshold voltage
Title Total dose effects in composite nitride-oxide films
URI https://ieeexplore.ieee.org/document/903768
https://www.proquest.com/docview/1002439063
https://search.proquest.com/docview/26615463
https://search.proquest.com/docview/28684819
https://search.proquest.com/docview/914644221
Volume 47
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LS8NAEB5sT3rwURXrcxGvqftKd_coaunJixW8hWR3AgVNxFjw57u7SYviA7yEkExgmZ3JfMnMfANwwQRSo0uVMKdE4uNtkRTecpKSMr_JyITKQ7_z9F7dPeqbW7nk2Y69MIgYi89wFE5jLt_VdhF-lV0a6t1B96CnjG5btVYJA5nSbliB91-P4jsSIUbNJRej9sEvoSfOUvn2Ao5RZbL1r_Vsw2YHHslVu9s7sIbVADY-UQrugpjVHk4TVzdIuloNMq9IqBwP5VlIvAu_zh0m9bs_knL-9NzswcPkdnY9TbrBCIkVY_2WWOaKvJDoFENh5Zgbqca5Ewa1Q4e5zkPyLjWW2kD_payhWPq15hyZpY6KfehXdYUHQEqZlrTQqY9ZXGontGMhE6i0TanV3A3hfKmz7KXlv8jidwM1GRdZq4EhDIJyVgLLq8dL5WadYzSBIpl7DOSB0RDOVre9SYc8RV5hvWiygBkCS_8fEnocxgCYIZBfJIyPAFJyzg5_XNsRrMee-liXcgz9t9cFnkCvcYvTaFcfgs3K_Q
link.rule.ids 315,782,786,798,27933,27934,54767
linkProvider IEEE
linkToHtml http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT9tAEB5BeoAeSnmpKZSsKq5O9uXs7hEBURCPC6nEzbJ3x1Kk1kY4kfj57K6diKqA1Itl2WNpNTvj-eyZ-QbglAmkRpcqYU6JxMfbIim85SQlZX6TkQmVh37n6b26e9AXl3LFsx17YRAxFp_hMJzGXL6r7TL8KhsZ6t1Bb8KnVKqxapu11ikDmdJuXIH3YI_jOxohRs2Ii2H76F_BJ05T-ecVHOPKZOe_VvQVvnTwkZy1-70LG1jtwedXpIL7IGa1B9TE1Q2SrlqDzCsSasdDgRYS78RPc4dJ_eyPpJz__tMcwK_J5ex8mnSjERIrxnqRWOaKvJDoFENh5Zgbr5HcCYPaocNc5yF9lxpLbSAAU9ZQLP1ac47MUkfFIfSqusJvQEqZlrTQqY9aXGontGMhF6i0TanV3PXh50pn2WPLgJHFLwdqMi6yVgN92AvKWQusrh6vlJt1rtEEkmTuUZCHRn0YrG97ow6ZirzCetlkATUEnv4PJPQ4DAIwfSDvSBgfA6TknH1_c20D2JrObm-ym6u76yPYjh32sUrlGHqLpyX-gM3GLU-ijb0AWXrOTg
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Total+dose+effects+in+composite+nitride-oxide+films&rft.jtitle=IEEE+transactions+on+nuclear+science&rft.au=Sung-Chul+Lee&rft.au=Raparla%2C+A.&rft.au=Li%2C+Y.F.&rft.au=Gasiot%2C+G.&rft.date=2000-12-01&rft.pub=IEEE&rft.issn=0018-9499&rft.eissn=1558-1578&rft.volume=47&rft.issue=6&rft.spage=2297&rft.epage=2304&rft_id=info:doi/10.1109%2F23.903768&rft.externalDocID=903768
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9499&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9499&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9499&client=summon