Total dose effects in composite nitride-oxide films

Total dose effects in composite nitride-oxide films

Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs g...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science Vol. 47; no. 6; pp. 2297 - 2304
Main Authors: Sung-Chul Lee, Raparla, A., Li, Y.F., Gasiot, G., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Featherby, M., Johnson, D.
Format: Journal Article
Language:English
Published: New York IEEE 01-12-2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Capacitors
Degradation
Dielectric thin films
Electron traps
Ionizing radiation
MOSFETs
Nitrides
Oxides
Power transistors
Radiation effects
Silicon compounds
Threshold voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
ISSN:0018-9499
1558-1578
DOI:10.1109/23.903768