Analysis of radiation effects on individual DRAM cells

Analysis of radiation effects on individual DRAM cells

A novel way to measure the radiation characteristics of DRAM memory cells is presented. Radiation exposure tends to drive retention times lower for cells. The change in retention time (the time period required for a cell to upset without refreshing) is used to measure the effect of irradiation on th...

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Bibliographic Details
Published in:IEEE transactions on nuclear science Vol. 47; no. 6; pp. 2534 - 2538
Main Authors: Scheick, L.Z., Guertin, S.M., Swift, G.M.
Format: Journal Article
Language:English
Published: New York IEEE 01-12-2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Aerospace electronics
Capacitors
Dynamic random access memory
Error correction
Ionizing radiation
Irradiation
Radiation effects
Random access memory
Single event upset
Testing
Time measurement
Voltage
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Summary:A novel way to measure the radiation characteristics of DRAM memory cells is presented. Radiation exposure tends to drive retention times lower for cells. The change in retention time (the time period required for a cell to upset without refreshing) is used to measure the effect of irradiation on the DRAM cells. Both the radiation response of a single DRAM cell and the response of all cells as a statistical whole are analyzed.
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ISSN:0018-9499
1558-1578
DOI:10.1109/23.903804