Universal fluctuations in Kardar-Parisi-Zhang growth on one-dimensional flat substrates

Universal fluctuations in Kardar-Parisi-Zhang growth on one-dimensional flat substrates

We present a numerical study of the evolution of height distributions (HDs) obtained in interface growth models belonging to the Kardar-Parisi-Zhang (KPZ) universality class. The growth is done on an initially flat substrate. The HDs obtained for all investigated models are very well fitted by the t...

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Bibliographic Details
Published in:Physical review. E, Statistical, nonlinear, and soft matter physics Vol. 85; no. 1 Pt 1; p. 010601
Main Authors: Oliveira, T J, Ferreira, S C, Alves, S G
Format: Journal Article
Language:English
Published: United States 18-01-2012
Subjects:
Computer Simulation
Crystallization - methods
Models, Chemical
Models, Molecular
Nanostructures - chemistry
Nanostructures - ultrastructure
Online Access:Get full text
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Summary:We present a numerical study of the evolution of height distributions (HDs) obtained in interface growth models belonging to the Kardar-Parisi-Zhang (KPZ) universality class. The growth is done on an initially flat substrate. The HDs obtained for all investigated models are very well fitted by the theoretically predicted Gaussian orthogonal ensemble (GOE) distribution. The first cumulant has a shift that vanishes as t(-1/3), while the cumulants of order 2≤n≤4 converge to GOE as t(-2/3) or faster, behaviors previously observed in other KPZ systems. These results yield evidences for the universality of the GOE distribution in KPZ growth on flat substrates. Finally, we further show that the surfaces are described by the Airy(1) process.
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ISSN:1539-3755
1550-2376
DOI:10.1103/physreve.85.010601