An alternative method for metallization by laser and ion beam irradiation
A scanning Ar + laser beam and a focused 30 keV Ga + ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or io...
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| Published in: | Microelectronic engineering Vol. 60; no. 3; pp. 429 - 437 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
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Elsevier B.V
01-04-2002
Elsevier Science |
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| Abstract | A scanning Ar
+ laser beam and a focused 30 keV Ga
+ ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or ion beam irradiation using platinum oxide thin films, prepared by magnetron sputtering under an argon/oxygen plasma. A maskless patterning of the platinum oxide film is possible by scanned laser and focused ion beam irradiation. Additionally to the scanning methods it is also possible to pattern the PtO
2 film by broad ion beam irradiation using masks. For wiring we patterned conducting areas of up to 2 mm width and up to 15 mm length with a broad Ga
+ ion beam (energy: 300 keV, dose: 5×10
15 Ga
+/cm
2). The laser- and the ion-patterned large areas could be easily bonded with an Al wire to carry out four-point resistance measurements. |
|---|---|
| AbstractList | A scanning Ar
+ laser beam and a focused 30 keV Ga
+ ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or ion beam irradiation using platinum oxide thin films, prepared by magnetron sputtering under an argon/oxygen plasma. A maskless patterning of the platinum oxide film is possible by scanned laser and focused ion beam irradiation. Additionally to the scanning methods it is also possible to pattern the PtO
2 film by broad ion beam irradiation using masks. For wiring we patterned conducting areas of up to 2 mm width and up to 15 mm length with a broad Ga
+ ion beam (energy: 300 keV, dose: 5×10
15 Ga
+/cm
2). The laser- and the ion-patterned large areas could be easily bonded with an Al wire to carry out four-point resistance measurements. A scanning Ar super(+) laser beam and a focused 30 keV Ga super(+) ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or ion beam irradiation using platinum oxide thin films, prepared by magnetron sputtering under an argon/oxygen plasma. A maskless patterning of the platinum oxide film is possible by scanned laser and focused ion beam irradiation. Additionally to the scanning methods it is also possible to pattern the PtO sub(2) film by broad ion beam irradiation using masks. For wiring we patterned conducting areas of up to 2 mm width and up to 15 mm length with a broad Ga super(+) ion beam (energy: 300 keV, dose: 5x10 super(15) Ga super(+)/cm super(2)). The laser- and the ion-patterned large areas could be easily bonded with an Al wire to carry out four-point resistance measurements. copyright 2002 Elsevier Science B.V. All rights reserved. |
| Author | Edinger, K Diegel, M Steenbeck, K Machalett, F |
| Author_xml | – sequence: 1 givenname: F surname: Machalett fullname: Machalett, F email: machalet@pinet.uni-jena.de organization: Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany – sequence: 2 givenname: K surname: Edinger fullname: Edinger, K organization: Institute for Plasma Research, University of Maryland, College Park, MD 20742, USA – sequence: 3 givenname: M surname: Diegel fullname: Diegel, M organization: Institut für Physikalische Hochtechnologie e.V., Winzerlaer Strasse 10, D-07745 Jena, Germany – sequence: 4 givenname: K surname: Steenbeck fullname: Steenbeck, K organization: Institut für Physikalische Hochtechnologie e.V., Winzerlaer Strasse 10, D-07745 Jena, Germany |
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| Cites_doi | 10.1088/0957-4484/7/3/013 10.1007/s003390000598 10.1016/0029-554X(80)90440-1 10.1063/1.125945 10.1143/JJAP.23.L293 10.1557/PROC-147-127 |
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| Issue | 3 |
| Keywords | Ion irradiation Metallization Interconnects 85.40.Ls 42.62Cf 61.80.Jh Laser application Microelectronic fabrication Patterning Interconnection Metallic bond Metallizing Laser irradiation Focused ion beam technology |
| Language | English |
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| References | Machalett, Edinger, Melngailis, Diegel, Steenbeck, Steinbeiss (BIB7) 2000; 71 Utlaut (BIB3) 1997 Steenbeck, Steinbeiss, Eick, Köhler, Redlich, Schmidt (BIB8) 1993 D.R. Lide, in: CRC Handbook of Chemistry and Physics, 76th Edition, CRC Press, Boca Raton, FL, 1995, p. 12-47. Gamo, Takakura, Samoto, Shimizu, Namba (BIB1) 1984; 23 Biersack, Haggmark (BIB11) 1980; 174 T. Köhler, Laserbeeinflussung von Hochtemperatursupraleitern, Dissertation (PhD thesis), Shaker, Aachen, 1997, ISBN 3-8265-3225-2. Machalett, Edinger, Ye, Melngailis, Venkatesan, Diegel, Steenbeck (BIB6) 2000; 76 Ziegler, Biersack, Littmark (BIB12) 1996; Vol. 1 Melngailis, Blauner (BIB5) 1989; 147 Prewett, Mair (BIB2) 1991 Matsui, Ochiai (BIB4) 1996; 7 F. Machalett, K. Edinger, M. Diegel, K. Steenbeck, Ion irradiation effects in platinum oxide films, to be published. Prewett (10.1016/S0167-9317(01)00703-1_BIB2) 1991 Machalett (10.1016/S0167-9317(01)00703-1_BIB7) 2000; 71 Matsui (10.1016/S0167-9317(01)00703-1_BIB4) 1996; 7 Biersack (10.1016/S0167-9317(01)00703-1_BIB11) 1980; 174 Melngailis (10.1016/S0167-9317(01)00703-1_BIB5) 1989; 147 Gamo (10.1016/S0167-9317(01)00703-1_BIB1) 1984; 23 Steenbeck (10.1016/S0167-9317(01)00703-1_BIB8) 1993 10.1016/S0167-9317(01)00703-1_BIB9 10.1016/S0167-9317(01)00703-1_BIB13 Utlaut (10.1016/S0167-9317(01)00703-1_BIB3) 1997 10.1016/S0167-9317(01)00703-1_BIB10 Machalett (10.1016/S0167-9317(01)00703-1_BIB6) 2000; 76 Ziegler (10.1016/S0167-9317(01)00703-1_BIB12) 1996; Vol. 1 |
| References_xml | – volume: 7 start-page: 247 year: 1996 end-page: 258 ident: BIB4 publication-title: Nanotechnology contributor: fullname: Ochiai – volume: 76 start-page: 3445 year: 2000 end-page: 3447 ident: BIB6 publication-title: Appl. Phys. Lett. contributor: fullname: Steenbeck – start-page: 429 year: 1997 end-page: 488 ident: BIB3 article-title: Focused ion beams publication-title: Handbook of Charged Particle Optics contributor: fullname: Utlaut – volume: 147 start-page: 127 year: 1989 ident: BIB5 publication-title: Mater. Res. Soc. Symp. Proc. contributor: fullname: Blauner – start-page: 1593 year: 1993 end-page: 1596 ident: BIB8 publication-title: Applied Superconductivity contributor: fullname: Schmidt – volume: 71 start-page: 331 year: 2000 end-page: 335 ident: BIB7 publication-title: Appl. Phys. A contributor: fullname: Steinbeiss – volume: Vol. 1 year: 1996 ident: BIB12 publication-title: The Stopping and Range of Ions in Solids contributor: fullname: Littmark – volume: 174 start-page: 257 year: 1980 ident: BIB11 publication-title: Nucl. Instrum. Methods contributor: fullname: Haggmark – volume: 23 start-page: L293 year: 1984 end-page: L295 ident: BIB1 publication-title: Jpn. J. Appl. Phys. contributor: fullname: Namba – year: 1991 ident: BIB2 publication-title: Focused Ion Beams from Liquid Metal Ion Sources contributor: fullname: Mair – start-page: 1593 year: 1993 ident: 10.1016/S0167-9317(01)00703-1_BIB8 contributor: fullname: Steenbeck – volume: 7 start-page: 247 year: 1996 ident: 10.1016/S0167-9317(01)00703-1_BIB4 publication-title: Nanotechnology doi: 10.1088/0957-4484/7/3/013 contributor: fullname: Matsui – volume: 71 start-page: 331 year: 2000 ident: 10.1016/S0167-9317(01)00703-1_BIB7 publication-title: Appl. Phys. A doi: 10.1007/s003390000598 contributor: fullname: Machalett – volume: 174 start-page: 257 year: 1980 ident: 10.1016/S0167-9317(01)00703-1_BIB11 publication-title: Nucl. Instrum. Methods doi: 10.1016/0029-554X(80)90440-1 contributor: fullname: Biersack – ident: 10.1016/S0167-9317(01)00703-1_BIB10 – ident: 10.1016/S0167-9317(01)00703-1_BIB9 – volume: 76 start-page: 3445 year: 2000 ident: 10.1016/S0167-9317(01)00703-1_BIB6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.125945 contributor: fullname: Machalett – ident: 10.1016/S0167-9317(01)00703-1_BIB13 – volume: 23 start-page: L293 year: 1984 ident: 10.1016/S0167-9317(01)00703-1_BIB1 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.23.L293 contributor: fullname: Gamo – volume: 147 start-page: 127 year: 1989 ident: 10.1016/S0167-9317(01)00703-1_BIB5 publication-title: Mater. Res. Soc. Symp. Proc. doi: 10.1557/PROC-147-127 contributor: fullname: Melngailis – start-page: 429 year: 1997 ident: 10.1016/S0167-9317(01)00703-1_BIB3 article-title: Focused ion beams contributor: fullname: Utlaut – year: 1991 ident: 10.1016/S0167-9317(01)00703-1_BIB2 contributor: fullname: Prewett – volume: Vol. 1 year: 1996 ident: 10.1016/S0167-9317(01)00703-1_BIB12 contributor: fullname: Ziegler |
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| Snippet | A scanning Ar
+ laser beam and a focused 30 keV Ga
+ ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal... A scanning Ar super(+) laser beam and a focused 30 keV Ga super(+) ion beam (FIB) have been used to transform an insulating (or high-resistivity... |
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| SubjectTerms | Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Interconnects Ion irradiation Laser application Metallization |
| Title | An alternative method for metallization by laser and ion beam irradiation |
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