An alternative method for metallization by laser and ion beam irradiation

• Published in: Microelectronic engineering Vol. 60; no. 3; pp. 429 - 437
• Main Authors: Machalett, F, Edinger, K, Diegel, M, Steenbeck, K
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-04-2002; Elsevier Science
• Subjects: Applied sciences; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Interconnects; Ion irradiation; Laser application; Metallization; Ion irradiation; Metallization; Interconnects; 85.40.Ls; 42.62Cf; 61.80.Jh; Laser application; Microelectronic fabrication; Patterning; Interconnection; Metallic bond; Metallizing; Laser irradiation; Focused ion beam technology
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(01)00703-1

A scanning Ar
+ laser beam and a focused 30 keV Ga
+ ion beam (FIB) have been used to transform an insulating (or high-resistivity semiconducting) noble metal oxide film to a conducting layer. Resulting from these experiments we propose a method for the fast and one-step metallization by laser or ion beam irradiation using platinum oxide thin films, prepared by magnetron sputtering under an argon/oxygen plasma. A maskless patterning of the platinum oxide film is possible by scanned laser and focused ion beam irradiation. Additionally to the scanning methods it is also possible to pattern the PtO
2 film by broad ion beam irradiation using masks. For wiring we patterned conducting areas of up to 2 mm width and up to 15 mm length with a broad Ga
+ ion beam (energy: 300 keV, dose: 5×10
15 Ga
+/cm
2). The laser- and the ion-patterned large areas could be easily bonded with an Al wire to carry out four-point resistance measurements.