Enhancement of Electrical and Dielectric Properties of Graphene Oxide‐nanoparticle Based Devices

• Published in: SILICON Vol. 14; no. 5; pp. 1913 - 1924
• Main Authors: Ashery, A., Moussa, M. A., Turky, G. M.
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01-04-2022; Springer Nature B.V
• Subjects: Chemistry; Chemistry and Materials Science; Current voltage characteristics; Dielectric properties; Diodes; Environmental Chemistry; Graphene; Inorganic Chemistry; Lasers; Materials Science; Metal oxide semiconductors; Nanoparticles; Nyquist plots; Optical Devices; Optics; Original Paper; Photonics; Polymer Sciences; Polyvinyl alcohol; Raman spectroscopy; Schottky diodes; Silicon dioxide; Spectrum analysis; Graphene oxide; PVA –nyquist plot; Thermionic emission; Capacity; Schottky diode
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-021-00943-6

The aim of this work is to invent a novel technology for manufacture not only graphene oxide, but also conductive graphene oxide. This is the novelty in this technology, which is not available in any other method for preparing graphene oxide. This study describes a unique way for preparation of conductive nano-particles of graphene oxide, GO. The advantages of this technology is very simple, low cost, short time of preparation and can be manufacture a large amount of conductive GO by firing polyvinyl alcohol PVA on SiO
2
/pSi to preparation this assembly GO/SiO2/pSi as a Schottky barrier diode or Metal Oxide Semiconductor, MOS. Besides the pioneering in this article GO is deemed insulator, however with rising temperature through firing PVA, its conductivity remarkably enhances and the produced GO can be used as a conductor. The as-prepared sample has been characterized using different techniques (e.g. Scanning Electron Microscopy (SEM), Raman Spectroscopy, X-Ray diffraction (XRD) and Impedance Spectroscopy. Temperature, voltage and frequency dependences of M’, M’’, 1/C
2
, R
s
, σ
ac
and tanδ of GO/SiO2//p-Si diodes were achieved in the varied ranges of voltage and frequency. I-V characteristic of GO/SiO2/pSi Schottky-diode is taken at different temperatures. The elementary factors of the diode such as barrier height (Φ
b
), series resistance (R
s
) and ideality factor (n), of GO/SiO2/pSi are also considered. The nyquist plot of M″(M′) at different voltages and temperatures were examined.