Super-high interface adhesion through silver/polyimide heterojunction

[Display omitted] •High adhesion (25 N/cm) is achieved by in-situ generated Ag/Polyimide heterogeneity.•There is an interaction between chemical etching and chemical reduction on interface strength.•Structure and composition of Ag at interface are significantly affected by reduction temperature and...

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Bibliographic Details
Published in:Materials & design Vol. 233; p. 112276
Main Authors: Hu, Jinxin, Zhu, Dezhi, Wang, Fen, Long, Yan, Kang, Zhixin, Gui, Zhenzhen
Format: Journal Article
Language:English
Published: Elsevier Ltd 01-09-2023
Elsevier
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Summary:[Display omitted] •High adhesion (25 N/cm) is achieved by in-situ generated Ag/Polyimide heterogeneity.•There is an interaction between chemical etching and chemical reduction on interface strength.•Structure and composition of Ag at interface are significantly affected by reduction temperature and pH.•The detachment of Ag aggregations during peeling and high temperature is the main reason of failure. Metallized polymer film is becoming increasingly common in cutting-edge technology fields, and interface adhesion is the key factor affecting service performance. In this article, we used all-wet process to prepare Ag/Polyimide composite film with ultra-high interface adhesion (Over 25 N/cm). The influence of etching and reduction on interface adhesion was analyzed using central composite experiments and response surface methodology. Microcracks on polyimide (PI) surface were the basis for the formation of mechanical interlocks. And combined with SEM, EDS, and XPS data, the effect of Ag structure and composition on interface adhesion during reduction was summarized. The role of Ag aggregations at interface was explained, and concluded the detachment of Ag aggregations during peeling and high temperature was the main reason of failure. RFID tag, Circuit, and Cu/Ag/PI film (Resistivity: 9.3 × 10−6 Ω·cm) were made, which confirmed the compatibility and usability of Ag/PI film.
ISSN:0264-1275
1873-4197
DOI:10.1016/j.matdes.2023.112276