Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature for the first time, focusing on cryogenic applications, down to 4.2 K. The...

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Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 67; no. 11; pp. 4563 - 4567
Main Authors:	Cardoso Paz, Bruna, Casse, Mikael, Theodorou, Christoforos, Ghibaudo, Gerard, Kammler, Thorsten, Pirro, Luca, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-11-2020 The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Institute of Electrical and Electronics Engineers
Subjects:	CMOS Cryogenic applications Cryogenics Electronics Engineering Sciences fully-depleted silicon-on-insulator (FDSOI) LF noise Logic gates low-frequency noise (LFN) Micro and nanotechnologies Microelectronics MOSFET MOSFETs Noise Performance evaluation Silicon-on-insulator Threshold voltage Transconductance low frequency noise FDSOI MOSFET Cryogenic applications
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