Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

• Published in: IEEE transactions on electron devices Vol. 67; no. 11; pp. 4563 - 4567
• Main Authors: Cardoso Paz, Bruna, Casse, Mikael, Theodorou, Christoforos, Ghibaudo, Gerard, Kammler, Thorsten, Pirro, Luca, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-11-2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); Institute of Electrical and Electronics Engineers
• Subjects: CMOS; Cryogenic applications; Cryogenics; Electronics; Engineering Sciences; fully-depleted silicon-on-insulator (FDSOI); LF noise; Logic gates; low-frequency noise (LFN); Micro and nanotechnologies; Microelectronics; MOSFET; MOSFETs; Noise; Performance evaluation; Silicon-on-insulator; Threshold voltage; Transconductance; low frequency noise; FDSOI MOSFET; Cryogenic applications
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2020.3021999

This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature for the first time, focusing on cryogenic applications, down to 4.2 K. The back bias impact on device performance is evaluated. The results reveal that the threshold voltage tuning is found to be temperature independent, allowing extra drain current improvement. This is particularly interesting for short channel devices, whose drain current gain with temperature lowering is expected to be smaller in comparison with long channel MOSFETs. LFN is characterized by means of time-domain current sampling measurements. Moderate and strong inversion regimes are investigated. The carrier number with correlated mobility fluctuations model can well describe the 1/<inline-formula> <tex-math notation="LaTeX">{f} </tex-math></inline-formula> noise behavior down to 4.2 K. The physical origin behind the drain current noise-to-signal power augmentation with temperature lowering could be mainly attributed to the normalized transconductance improvement.