Growth of III–V semiconductor layers on Si patterned substrates

• Published in: Thin solid films Vol. 336; no. 1; pp. 63 - 68
• Main Authors: Gorbach, T.Ya, Holiney, R.Yu, Matveeva, L.A, Smertenko, P.S, Svechnikov, S.V, Venger, E.F, Ciach, R, Faryna, M
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 30-12-1998; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; GaAs and GaP layers; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Pulse vacuum thermal deposition; Si patterned substrates; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vacuum deposition; Pulse vacuum thermal deposition; GaAs and GaP layers; Si patterned substrates; Patterning; Gallium arsenides; Inorganic compounds; Semiconductor materials; Electron diffraction; Binary compounds; Crystallinity; Crystal growth from vapors; XRD; Pulse system; Experimental study; Substrates; Thin films; Gallium phosphides; Morphology; Chemical composition; Fabrication structure relation; SEM; Vacuum deposition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(98)01213-9

Patterned unheated Si{100} substrates in the form of the regular tetragonal pyramids and a structure like hemispherical plates have been found to be effective for a pulse vacuum thermal deposition (pulse-VTD) of GaAs and GaP thin layers (50–500 nm). The effect of the pulse-VTD technological parameters (pulse duration, pulse period, pulse number, pulse current) and the features of the substrate patterns (terraces, steps, kinks, sponges) on the morphology, the composition and the crystallinity of GaAs and GaP layers have been characterized by scanning electron microscopy, electron X-ray analysis and electron diffraction.