Temporal cross-section for carrier capture by self-assembled quantum dots

• Published in: Microelectronic engineering Vol. 53; no. 1; pp. 241 - 244
• Main Authors: Raymond, S., Fafard, S., Hinzer, K., Charbonneau, S., Merz, J.L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-06-2000; Elsevier Science
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuits; Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology; Miscellaneous; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Self assembly; Quantum dot; On line; Wetting; Photoluminescence; Time measurement; Experimental study; Auger effect; Time dependence; Charge carrier trapping; Filling; Measurement method; Charge carrier concentration
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(00)00306-3

Time-resolved studies of the wetting layer photoluminescence is combined with state-filling spectroscopy of the quantum dot emission to obtain carrier transfer rates from the wetting layer to the quantum dot states. This method allows us to obtain the capture rates as a function of wetting layer carrier concentration, a result that cannot be obtained from a time-dependent measurement of the quantum dot emission itself. The results show unamibiguously that the capture efficiency increases significantly with the carrier concentration in the wetting layer, indicating the dominant role of Auger processes in the capture dynamics. In the analysis the concept of capture cross section per unit time is introduced to take into account possible changes in capture times for different dot areal densities.