Raman characterization of epitaxial Cu–In–Se thin films

• Published in: Thin solid films Vol. 371; no. 1; pp. 36 - 39
• Main Authors: Ely, James H, Ohno, T.R, Furtak, T.E, Nelson, A.J
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01-08-2000; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Cu–In–Se thin films; Epitaxial; Exact sciences and technology; Iii-v and ii-vi semiconductors; Infrared and raman spectra and scattering; Materials science; Mechanical and acoustical properties; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physical properties of thin films, nonelectronic; Physics; Raman spectroscopy; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vapor phase epitaxy; growth from vapor phase; Raman spectroscopy; Cu–In–Se thin films; Epitaxial; Raman spectra; Inorganic compounds; Epitaxial layers; Indium selenides; Semiconductor materials; Transition element compounds; Crystal growth from vapors; Experimental study; Thin films; Copper selenides; Compressive stress; Chalcopyrite structure; Heteroepitaxy; Chemical composition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(00)01002-6

We have fabricated epitaxial chalcopyrite alloys with varying compositions and thicknesses on GaAs (001) substrates using a simple physical vapor deposition method. Growth of the films was characterized with Raman spectroscopy as well as by other analytical techniques. We identified both CuInSe
2 (001) and CuIn
3Se
5 (001). All of the spectra were dominated by the A
1(Γ
1
(1) [W
1]) non-polar optical mode at 172 cm
−1 for CuInSe
2 and 152 cm
−1 for the CuIn
3Se
5 phase. In addition, Raman spectra for the thinner layers indicated that these films are under compressive stress due to the lattice mismatch between the films and the substrate.