Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler

• Published in: IEEE transactions on microwave theory and techniques Vol. 48; no. 6; pp. 1000 - 1006
• Main Authors: Melique, X., Maestrini, A., Farre, R., Mounaix, P., Favreau, M., Vanbesien, O., Goutoule, J.-M., Mollot, F., Beaudin, G., Narhi, T., Lippens, D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-06-2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Barriers; Capacitance; Coaxial components; Devices; Heterostructures; Laboratories; Microwaves; Millimeter wave technology; Optical device fabrication; Power generation; Radio frequency; Space technology; Testing; Varactors; Voltage; Waveguides
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.904737

High-performance InGaAs-InAlAs-AlAs heterostructure barrier varactors (HBV's) have been designed, fabricated, and RF tested in a 250-GHz tripler block. The devices with two barriers stacked on the same epitaxy are planar integrated with coaxial-, coplanar-, and strip-type configurations. They exhibit state-of-the-art capacitance voltage characteristics with a zero-bias capacitance C/sub 3//sup 0/ of 1 fF//spl mu/m/sup 2/ and a capacitance ratio of 6:1. Experiments in a waveguide tripler mount show a 9.8-dBm (9.55-mW) output power for 10.7% conversion efficiency at 247.5 GHz. This is the highest output power and efficiency reported from an HBV device at J-band (220-325 GHz).