Modeling of electrical conductivity in high-temperature proton-conducting oxides

This work provides a methodology for modeling electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions, and electron holes. From the plots σ tot vs. P w 1/2 and σ tot...

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Bibliographic Details
Published in:	Solid state ionics Vol. 110; no. 3; pp. 255 - 262
Main Author:	Baek, Hyun-Deok
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 02-07-1998 Elsevier Science
Subjects:	BaTh 0.9Nd 0.1O 2.95 BaTh 0.9Y 0.1O 2.95 Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Diffusion in solids Electronic transport in condensed matter Exact sciences and technology HTPC Mixed conductivity and conductivity transitions Modeling Physics Self-diffusion and ionic conduction in nonmetals SrCe 0.95Yb 0.05O 2.975 Transport properties of condensed matter (nonelectronic) Water vapor pressure BaTh 0.9Nd 0.1O 2.95 BaTh 0.9Y 0.1O 2.95 Water vapor pressure Modeling SrCe 0.95Yb 0.05O 2.975 HTPC Inorganic compounds Electrical conductivity Electronic conductivity Actinide compounds Ionic conductivity Neodymium oxides Theoretical study Mixed conductivity Thorium oxides Rare earth compounds Strontium oxides Ytterbium oxides Barium oxides Proton conductivity Defect structure Quaternary compounds Cerium oxides Yttrium oxides
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Summary:	This work provides a methodology for modeling electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions, and electron holes. From the plots σ tot vs. P w 1/2 and σ tot vs. P 1/4 O 2 , thermodynamic and kinetic parameters were obtained representing transport properties such as concentration and mobility of the charge-carrying defects. The formulae for the calculation of partial conductivities were based on the defect structure of HTPCs. Illustrative calculations were made for the literature data measured in SrCe 0.95Yb 0.05O 2.975 system and BaTh 0.9RE 0.1O 2.95 (RE=Y and Nd) systems.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0167-2738 1872-7689
DOI:	10.1016/S0167-2738(98)00138-6