Growth and characterization of β-SiC films obtained by fs laser ablation

• Published in: Applied surface science Vol. 252; no. 13; pp. 4672 - 4677
• Main Authors: Ghica, C., Ristoscu, C., Socol, G., Brodoceanu, D., Nistor, L.C., Mihailescu, I.N., Klini, A., Fotakis, C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30-04-2006; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Interface structure and roughness; Laser ablation; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; SiC; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transmission electron microscopy; SiC; Transmission electron microscopy; Laser ablation; Scanning electron microscopy; Inorganic compounds; Silicon carbides; Pulsed laser deposition; Rough surfaces; Film growth; Thin films; Interface structure; Laser ablation technique; Silicon; Facet
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2005.07.087

We achieved the growth of cubic silicon carbide (SiC) films on (1
0
0)Si substrates by pulsed laser deposition (PLD) at moderate temperatures such as 750
°C, from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The morphology of deposited films is dominated by columns nucleated from a thin nanostructured beta silicon carbide (β-SiC) interface layer. The combined effects of columnar growth, tilted facets of the emerging columns and the presence of particulates on the film surface, lead to a rather rough surface of the films.