Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 261; no. 1-2; pp. 1142 - 1145
• Main Authors: Barnaby, Hugh J., Mclain, Michael, Esqueda, Ivan Sanchez
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-08-2007
• Subjects: Interface traps; MOS capacitors; n-Channel MOSFETs; Oxide trapped charge; Radiation; Shallow trench isolation; Shift registers; Total ionizing dose; Shallow trench isolation; 77.84.−s; 85.30.Tv; Oxide trapped charge; n-Channel MOSFETs; 61.80.−x; MOS capacitors; Radiation; Interface traps; Shift registers; Total ionizing dose; 61.72.Cc
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2007.03.109

This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits.