Elastic properties of sub-stoichiometric nitrogen ion implanted silicon

Elastic properties of sub-stoichiometric nitrogen ion implanted silicon

Elastic properties of sub-stoichiometric nitrogen implanted silicon were measured with nanometer-resolution using contact resonance atomic force microscopy (CR-AFM) as function of ion fluence and post-annealing conditions. The determined range of indentation moduli was between 100 and 180GPa dependi...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 349; pp. 169 - 172
Main Authors: Sarmanova, M.F., Karl, H., Mändl, S., Hirsch, D., Mayr, S.G., Rauschenbach, B.
Format: Journal Article
Language:English
Published: Elsevier B.V 15-04-2015
Subjects:
Annealing
Chromium
Contact
Contact resonance atomic force microscopy
Elastic constants
Elastic properties
Indentation
Ion implantation
Nanostructure
Silicon
Silicon nitride layers
X-ray photoelectron spectroscopy
X-rays
Ion implantation
Silicon nitride layers
Contact resonance atomic force microscopy
Elastic properties
X-ray photoelectron spectroscopy
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Description
Summary:Elastic properties of sub-stoichiometric nitrogen implanted silicon were measured with nanometer-resolution using contact resonance atomic force microscopy (CR-AFM) as function of ion fluence and post-annealing conditions. The determined range of indentation moduli was between 100 and 180GPa depending on the annealing duration and nitrogen content. The high indentation moduli can be explained by formation of Si–N bonds, as verified by X-ray photoelectron spectroscopy.
Bibliography:ObjectType-Article-1
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ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2015.02.073