Effect of doping on properties of Zno:Cu and Zno:Ag thin films

• Published in: Journal of materials science. Materials in electronics Vol. 18; no. 11; pp. 1115 - 1118
• Main Authors: KRYSHTAB, T, KHOMCHENKO, V. S, KHACHATRYAN, V. B, ROSHCHINA, N. N, ANDRACA-ADAME, J. A, LYTVYN, O. S, KUSHNIRENKO, V. I
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Norwell, MA Springer 01-11-2007; Springer Nature B.V
• Subjects: Applied sciences; Atomic force microscopy; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Copper; Cross-disciplinary physics: materials science; rheology; Electronics; Emission; Exact sciences and technology; Grain growth; Grain size; Materials; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Organic chemicals; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silver; Solar energy; Thin films; Zinc sulfides; Grain size; Atomic force microscopy; Exciton; Grain growth; Atmospheric pressure; Doping; Photoluminescence; Roughness; Glass; X ray diffraction; MOCVD; Thin film; Zinc sulfide; Silver; Rapid thermal annealing; Microelectronic fabrication; Growth mechanism; Zinc oxide; Oxidation; Copper
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9256-y

Issue Title: Special Issue: Photovoltaics, Solar Energy Materials & Thin Films - IMRC 2006, Cancun, Mexico Guest Editor Xavier Mathew ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method that consists of simultaneous oxidation and Ag-doping by the close spaced evaporation (CSE) of silver at the temperature of 500-600 °C. Photo-assisted rapid thermal annealing (PARTA) at ambient air during 10-30 s at the temperature of 700-800 °C was used for the ZnO:Cu films. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. The grain size of ZnO:Cu films increased with an increase of Cu concentration. PL spectra of as-deposited ZnO:Cu films depended on Cu concentration and contained the bands typical for the copper. After PARTA at high temperature the emission maximum shifted towards the short-wave region. During the fabrication of ZnO:Ag films the grain growth process was strongly affected by the Ag loading level. The grain size increased with an increase of Ag concentration and ZnO:Ag films with surface roughness of 8 nm were obtained. Observed 385 nm PL peak for these samples can be attributed to the exciton-exciton emission that proves the high quality of the obtained ZnO:Ag films.[PUBLICATION ABSTRACT]