GIXRF–NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 268; no. 3; pp. 370 - 373
• Main Authors: Pagels, M., Reinhardt, F., Pollakowski, B., Roczen, M., Becker, C., Lips, K., Rech, B., Kanngießer, B., Beckhoff, B.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-02-2010
• Subjects: Depth profiles; Grazing incidence X-ray fluorescence; Near edge X-ray absorption fine structure spectroscopy; Reference-free; Silicon thin-film solar cell; ZnO/Si interface; Near edge X-ray absorption fine structure spectroscopy; ZnO/Si interface; Grazing incidence X-ray fluorescence; Depth profiles; Silicon thin-film solar cell; Reference-free
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2009.09.009

GIXRF–NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing.