Raman investigation of layered ZrGeTe4 semiconductor

• Published in: Applied physics letters Vol. 114; no. 17
• Main Authors: Gong, Wentao, Li, Liang, Gong, Penglai, Zhou, Yulan, Zhang, Zhitao, Zhou, Weichang, Wang, Weike, Liu, Ziran, Tang, Dongsheng
• Format: Journal Article
• Language: English
• Published: 29-04-2019
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.5087778

This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices.