Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

• Published in: IEEE transactions on nuclear science Vol. 58; no. 6; pp. 2628 - 2636
• Main Authors: Lauenstein, J.-M, Goldsman, N., Liu, S., Titus, J. L., Ladbury, R. L., Kim, H. S., Phan, A. M., LaBel, K. A., Zafrani, M., Sherman, P.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2011; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Atomic properties; Charge; Drains; Failure; Hardness; Heavy ion; Ion beams; Logic gates; MOSFETs; Nuclear power generation; Oxides; power MOSFET; Radiation effects; Silver; single-event gate rupture (SEGR); Substrates; Xenon
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2011.2171995

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.