Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

• Published in: Crystals (Basel) Vol. 13; no. 5; p. 834
• Main Authors: Guo, Jiaping, Liu, Weiye, Ding, Ding, Tan, Xinhui, Zhang, Wei, Han, Lili, Wang, Zhaowei, Gong, Weihua, Li, Jiyun, Zhai, Ruizhan, Jia, Zhongqing, Ma, Ziguang, Du, Chunhua, Jia, Haiqiang, Tang, Xiansheng
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01-05-2023
• Subjects: Chemical properties; Electric fields; Electric properties; Electricity; Energy; escape; Light; Materials research; Multi Quantum Wells; Optoelectronic devices; photo-generated carriers; Photoelectricity; Potential barriers; Principles; Quantum dots; Quantum wells; Semiconductors; Short circuits; Solid state physics; Thermal energy; uncertainty principle; Uncertainty principles; Velocity; China
• ISSN: 2073-4352; 2073-4352
• DOI: 10.3390/cryst13050834

Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (PIN). In this work, we quantitatively analyze the relationship between the energy of carriers and the height of potential barriers to be crossed, based on the GaAs/InGaAs quantum well structure system, combined with the Heisenberg uncertainty principle. It was found that that the energy obtained by electrons from photons is just enough for them to escape, and it was found that the energy obtained by the hole is just enough for it to escape due to the extra energy calculated, based on the uncertainty principle. This extra energy is considered to come from photo-generated thermal energy. The differential reflection spectrum of the structure is then measured by pump–probe technology to verify the assumption. The experiment shows that the photo-generated carrier has a longer lifetime in its short circuit (SC) state, and thus it possesses a lower structure temperature than that in open circuit (OC). This can only explain a thermal energy reduction caused by the continuous carrier escape in SC state, indicating an extra thermal energy transferred to the escaping carriers. This study is of great significance to the design of new optoelectronic devices and can improve the theory of photo-generated carrier transports.