The use of symmetry for absolute E( K) determinations from IPS measurements of face-centred cubic crystals

• Published in: Solid state communications Vol. 98; no. 11; pp. 965 - 969
• Main Authors: Sheils, W, Riley, J.D, Leckey, R.C.G
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 1996; Elsevier
• Subjects: A. semiconductors; C. crystal structure and symmetry; Condensed matter: structure, mechanical and thermal properties; D. electronic band structure; Exact sciences and technology; photoelectron spectroscopies; Physics; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; A. semiconductors; C. crystal structure and symmetry; D. electronic band structure; photoelectron spectroscopies; E; Surfaces; FCC lattices; Crystal faces; Experimental study; Crystal structure
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(96)00170-6

This letter outlines a method for the experimental determination of E(
K) within the high symmetry planes of face-centred cubic (FCC) crystals. The method relies on utilizing the symmetry of these planes. It is shown that information for experimental E(
K) determinations may be found in sets of off-normal incidence IPS data that have been obtained from only one azimuthal plane. The method is applied to a set of isochromat IPS data collected from a GaAs (110) surface to make E(
K) determinations of two pairs of transitions.