Beam Profile Characterisation of an Optoelectronic Silicon Lens-Integrated PIN-PD Emitter between 100 GHz and 1 THz

Beam Profile Characterisation of an Optoelectronic Silicon Lens-Integrated PIN-PD Emitter between 100 GHz and 1 THz

Knowledge of the beam profiles of terahertz emitters is required for the design of terahertz instruments and applications, and in particular for designing terahertz communications links. We report measurements of beam profiles of an optoelectronic silicon lens-integrated PIN-PD emitter at frequencie...

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Bibliographic Details
Published in:Applied sciences Vol. 11; no. 2; p. 465
Main Authors: Smith, Jessica, Naftaly, Mira, Nellen, Simon, Globisch, Björn
Format: Journal Article
Language:English
Published: Basel MDPI AG 01-01-2021
Subjects:
Antennas
beam profile
Emitters
Gaussian beams (optics)
Lasers
Optoelectronics
Receivers & amplifiers
Sensors
Silicon
Spectrum analysis
terahertz
Terahertz frequencies
Wireless communications
Germany
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Summary:Knowledge of the beam profiles of terahertz emitters is required for the design of terahertz instruments and applications, and in particular for designing terahertz communications links. We report measurements of beam profiles of an optoelectronic silicon lens-integrated PIN-PD emitter at frequencies between 100 GHz and 1 THz and observe significant deviations from a Gaussian beam profile. The beam profiles were found to differ between the H-plane and the E-plane, and to vary strongly with the emitted frequency. Skewed profiles and irregular side-lobes were observed. Metrological aspects of beam profile measurements are discussed and addressed.
ISSN:2076-3417
2076-3417
DOI:10.3390/app11020465