Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes
In this work, gated midwave infrared (MWIR) Hg1-x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 X 10 cm and x = 0.31. CdTe was th...
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Published in: | Journal of electronic materials Vol. 36; no. 8; pp. 884 - 889 |
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Main Authors: | , , , , |
Format: | Conference Proceeding Journal Article |
Language: | English |
Published: |
New York, NY
Institute of Electrical and Electronics Engineers
01-08-2007
Springer Nature B.V |
Subjects: | |
Online Access: | Get full text |
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Summary: | In this work, gated midwave infrared (MWIR) Hg1-x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 X 10 cm and x = 0.31. CdTe was thermally deposited and used as both a passivant and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R 0 A of 1-5 X 10 Omegacm with zero gate bias. Application of 2 V to the gate improves the R 0 A by more than two orders of magnitude to 6.0 X 10 Omegacm, which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunneling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3 V, a field-induced junction breakdown was observed. An I n = alpha I f trend was observed above 200 pA reverse bias dark current, with alpha = 3.5 X 10 and beta = 0.82, which corresponds to the TAT dominated region. Below 200 pA, junction generation-recombination (GR) current starts to dominate and this previously mentioned trend is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 |
ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-007-0120-x |