Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes

In this work, gated midwave infrared (MWIR) Hg1-x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 X 10 cm and x = 0.31. CdTe was th...

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Published in:Journal of electronic materials Vol. 36; no. 8; pp. 884 - 889
Main Authors: WESTERHOUT, R. J, MUSCA, C. A, ANTOSZEWSKI, J, DELL, J. M, FARAONE, L
Format: Conference Proceeding Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 01-08-2007
Springer Nature B.V
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Summary:In this work, gated midwave infrared (MWIR) Hg1-x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 X 10 cm and x = 0.31. CdTe was thermally deposited and used as both a passivant and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R 0 A of 1-5 X 10 Omegacm with zero gate bias. Application of 2 V to the gate improves the R 0 A by more than two orders of magnitude to 6.0 X 10 Omegacm, which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunneling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3 V, a field-induced junction breakdown was observed. An I n = alpha I f trend was observed above 200 pA reverse bias dark current, with alpha = 3.5 X 10 and beta = 0.82, which corresponds to the TAT dominated region. Below 200 pA, junction generation-recombination (GR) current starts to dominate and this previously mentioned trend is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes.
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ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-007-0120-x