Enhancement of electrical properties in Al-doped ZnO films by tuning dc bias voltage during radio frequency magnetron sputtering

• Published in: Current applied physics Vol. 12; pp. S71 - S75
• Main Authors: No, Y.S., Park, D.H., Kim, T.W., Choi, J.W., Angadi, B., Choi, W.K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 20-12-2012
• Subjects: Al doped zinc oxide; Electrical properties; glass; radio waves; Rf-sputtering; Structural properties; temperature; Transparent; zinc oxide; Al doped zinc oxide; Rf-sputtering; Electrical properties; Transparent; Structural properties
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2012.05.022

Al-doped ZnO (AZO) thin films were deposited at room temperature on glass substrates by rf magnetron sputtering with simultaneous dc bias through an external inductor coil. The deposition rates of AZO films deposited using simultaneous rf and dc power along with an inductor coil were 20% higher than those deposited using only rf power. The effects of simultaneous rf and dc bias voltage during the deposition of AZO films were investigated in terms of their resistivity and compressive stress. It was observed that the AZO films deposited at 120 W rf power with 600 μH inductor coil exhibit the lowest resistivity of 6.71 × 10−4 Ω⋅cm.