Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

• Published in: NPG Asia materials Vol. 13; no. 1
• Main Authors: Naqi, Muhammad, Choi, Kyung Hwan, Yoo, Hocheon, Chae, Sudong, Kim, Bum Jun, Oh, Seungbae, Jeon, Jiho, Wang, Cong, Liu, Na, Kim, Sunkook, Choi, Jae-Young
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01-12-2021; Nature Publishing Group
• Subjects: 140/133; 142/126; 639/301/1005/1007; 639/301/357/995; Arrays; Biomaterials; Chemistry and Materials Science; Energy Systems; Field effect transistors; Low temperature; Materials Science; N-type semiconductors; Nanowires; Optical and Electronic Materials; Optical measurement; Optical properties; P-type semiconductors; Semiconductor devices; Semiconductors; Spectra; Structural Materials; Surface and Interface Science; Tellurium; Thin Films; Transconductance; Transistors
• ISSN: 1884-4049; 1884-4057
• DOI: 10.1038/s41427-021-00314-y

Low-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm
2
/Vs, an on/off current ratio of 1 × 10
4
, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.
We report a unique low-temperature-processed (≤100 °C) method for the scalable deposition of a tellurium nanowire network (Te-nanonet) to fabricate high-performance field-effect transistors (FETs) with stable electrical and optical properties. A maximum mobility of 4.7 cm
2
/Vs, an on/off current ratio of 1 × 10
4
, and a maximum transconductance of 2.18 µS are achieved. The electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.