Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS4
Memristive electrochemical metallization (ECM) devices based on cation migration and electrochemical metallization in solid electrolytes are considered promising for neuromorphic computing systems. Two-dimensional (2D) layered materials are emerging as potential candidates for electrolytes in reliab...
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Published in: | NPG Asia materials Vol. 12; no. 1 |
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Main Authors: | , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
London
Nature Publishing Group UK
18-12-2020
Nature Publishing Group |
Subjects: | |
Online Access: | Get full text |
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Summary: | Memristive electrochemical metallization (ECM) devices based on cation migration and electrochemical metallization in solid electrolytes are considered promising for neuromorphic computing systems. Two-dimensional (2D) layered materials are emerging as potential candidates for electrolytes in reliable ECM devices due to their two-dimensionally confined material properties. However, electrochemical metallization within a single-crystalline 2D layered material has not yet been verified. Here, we use transmission electron microscopy and energy-dispersive X-ray spectroscopy to investigate the resistive switching mechanism of an ECM device containing a single-crystalline 2D layered CrPS
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electrolyte. We observe the various conductive filament (CF) configurations induced by an applied voltage in an Ag/CrPS
4
/Au device in the initial/low-resistance/high-resistance/breakdown states. These observations provide concrete experimental evidence that CFs consisting of Ag metal can be formed inside single-crystalline 2D layered CrPS
4
and that their configuration can be changed by an applied voltage. Density functional theory calculations confirm that the sulfur vacancies in single-crystalline CrPS
4
can facilitate Ag ion migration from the active electrode layer. The electrically induced changes in Ag CFs inside single-crystalline 2D layered CrPS
4
raise the possibility of a reliable ECM device that exploits the properties of two-dimensionally confined materials.
2D materials: How neuromorphic chips get wired up
A 2D layered material has provided critical insights toward improving the stability of devices that can emulate biological synapses. Researchers in Seoul, South Korea, led by Jae-Pyoung Ahn at the Korea Institute of Science and Technology and Bae Ho Park from Konkuk University have used high-resolution microscopy to investigate electrochemical metallization cells, a new type of non-volatile computer memory. These cells, made by infusing insulators with tiny metallic filaments, can mimic the low and high conductivity states of synapses. When the team looked at the structure of a chromium thiophosphate insulator composed of numerous 2D crystal layers, they found that the pathways the filaments follow are guided by specific crystal defects. These findings may help manufacturers produce more reliable electrochemical metallization cells by reducing the likelihood of random, non-uniform filament formation.
We report on the formation and rupture of CFs through Ag ion migration inside a single-crystalline 2D van der Waals (vdW) solid electrolyte material within an ECM device structure. This study provides clear experimental evidence that CFs consisting of Ag can be formed inside single-crystalline 2D layered chromium thiophosphate (CrPS
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) and their configuration can be changed by an applied voltage. Density functional theory calculations confirm that the Ag ion migration is an energetically favorable process. The electrically induced changes in Ag CFs inside single-crystalline CrPS
4
raise the possibility of a reliable ECM device that exploits the properties of two-dimensionally confined materials. |
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ISSN: | 1884-4049 1884-4057 |
DOI: | 10.1038/s41427-020-00272-x |