Synthesis of phase-pure SnS particles employing dithiocarbamate organotin(IV) complexes as single source precursors in thermal decomposition experiments
Preparation of tin(II) sulfide, semiconductor material, has been accomplished by thermal decomposition of easily prepared organotin dithiocarbamate complexes: [Sn{S2CNEt2}2Ph2] (1), [Sn{S2CNEt2}Ph3] (2), [Sn{S2CNEt2}3Ph] (3) and [Sn{S2CN(C4H8)}2Bu2] (4). Phase‐pure tin(II) sulfide has been obtained...
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Published in: | Applied organometallic chemistry Vol. 24; no. 9; pp. 650 - 655 |
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Main Authors: | , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Chichester, UK
John Wiley & Sons, Ltd
01-09-2010
Wiley Subscription Services, Inc |
Subjects: | |
Online Access: | Get full text |
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Summary: | Preparation of tin(II) sulfide, semiconductor material, has been accomplished by thermal decomposition of easily prepared organotin dithiocarbamate complexes: [Sn{S2CNEt2}2Ph2] (1), [Sn{S2CNEt2}Ph3] (2), [Sn{S2CNEt2}3Ph] (3) and [Sn{S2CN(C4H8)}2Bu2] (4). Phase‐pure tin(II) sulfide has been obtained by pyrolysis of these precursors at 350 °C in N2. Thermogravimetric analysis, X‐ray powder diffraction, scanning electron microscopy, X‐ray electron probe microanalysis and 119Sn Mössbauer spectroscopy revealed that the complexes decompose in a single and sharp step (1 and 2), or in pseudo‐single stage (3 and 4), to produce SnS. We have also measured the bandgap energies of the residues using electronic spectroscopy in the solid state and the result relates well to that in the literature for SnS, 1.3 eV. A decomposition mechanism was also proposed for each complex based on electrospray ionization tandem mass spectrometric results. The synthetic method used in this work might be useful for the preparation of pure SnS on a large scale. Copyright © 2010 John Wiley & Sons, Ltd.
Tin(II) sulfide was obtained and characterized by X‐ray powder diffraction, scanning electron microscopy, X‐ray electron probe microanalysis, electronic and 119Sn Mössbauer spectroscopy. |
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Bibliography: | ArticleID:AOC1663 ark:/67375/WNG-QVBXNQBG-2 CNPq FAPEMIG, Brazil istex:28BFCD16FAB5204CD04CA726B3C74DB36504C9B4 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0268-2605 1099-0739 1099-0739 |
DOI: | 10.1002/aoc.1663 |