Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

• Published in: Optical materials Vol. 36; no. 12; pp. 1942 - 1945
• Main Authors: Kamada, Kei, Kurosawa, Shunsuke, Prusa, Petr, Nikl, Martin, Kochurikhin, Vladimir V., Endo, Takanori, Tsutumi, Kousuke, Sato, Hiroki, Yokota, Yuui, Sugiyama, Kazumasa, Yoshikawa, Akira
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier B.V 01-10-2014; Elsevier
• Subjects: Exact sciences and technology; Fundamental areas of phenomenology (including applications); Optical materials; Optics; Physics; Scintillator; Single crystal growth; Scintillator; Single crystal growth; Scintillations; Monocrystals; Quantity ratio; Doped materials; Cerium additions; Czochralski method; Optical materials; Sensor materials; Crystal growth from melts; Crystal structure
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2014.04.001

•We grew 2-in. size GAGG single crystals with various Ga concentration by Cz method.•We investigated Ga segregation and lowest limit of Ga for single crystal growth.•Light yield has maximum value of 58,000 photon/MeV at x=2.7Ga concentration.•Relation between composition, structure, scintillation properties was discussed.
2-in. size Ce 1%:Gd3(Al1−xGax)5O12 (GAGG) single crystals with various Ga concentration of x=2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x=2.7Ga concentration. Energy resolution was improved with decreasing Ga concentration and x=2.4 sample showed best energy resolution of 4.2%@662keV. The dependence of scintillation properties on crystal structure and Al–Ga was discussed.