An analytical model for the Non-Quasi-Static small-signal behaviour of submicron MOSFETs

• Published in: Solid-state electronics Vol. 38; no. 1; pp. 121 - 130
• Main Authors: Smedes, T., Klaassen, F.M.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 1995; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Field effect transistor; Semiconductor device; Approximation; Small signal behavior; Performance characteristic; MOS transistor; Modeling
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(94)E0032-A

A new, analytical Non-Quasi-Static model, in terms of admittance parameters, for the small-signal behaviour of short channel MOSFETs is presented. The relevant short channel effects are included explicitly in the derivation of the model. The effects of approximating the exact analytical solutions are discussed. A new approximation for extremely high frequencies is proposed. The model is consistent with previously published low frequency models and shows good agreement with 2D device simulations and measurements. Finally the influence of parasitics is illustrated.