Achieving broad-area laser diodes with high output power and single-lobed far-field patterns in the lateral direction by loading a modal reflector

A modal reflector, which consists of a high-reflectivity region surrounded by low-reflectivity regions, is added to the front facet of two types of broad-area laser diodes (LD's) to control the lateral modes. One type of LD is the self-aligned laser with a bent active layer (SBA LD) that has a...

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Bibliographic Details
Published in:IEEE journal of quantum electronics Vol. 30; no. 8; pp. 1683 - 1690
Main Authors: Shigihara, K., Nagai, Y., Kakimoto, S., Ikeda, K.
Format: Journal Article
Language:English
Published: New York, NY IEEE 01-08-1994
Institute of Electrical and Electronics Engineers
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Summary:A modal reflector, which consists of a high-reflectivity region surrounded by low-reflectivity regions, is added to the front facet of two types of broad-area laser diodes (LD's) to control the lateral modes. One type of LD is the self-aligned laser with a bent active layer (SBA LD) that has a real index-guiding mechanism. The other is a planar-stripe LD that consists of a Zn-diffused region to confine the current flow and has a gain-guiding mechanism. For the SBA LD's with a modal reflector, stable single-lobed far-field patterns (FFP's) are obtained at up to 0.3 and 0.4 W output powers in continuous wave (CW) operation and pulsed operation, respectively. In addition, for planar-stripe LD's with a modal reflector, stable single-lobed FFP's are obtained at up to 0.4 W in CW operation. The lateral modes inside the cavity are analyzed by utilizing a slit model and FFP's are calculated. Good agreement is found between experimental and calculated FFP's for a large Fresnel number.< >
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ISSN:0018-9197
1558-1713
DOI:10.1109/3.301630