Analytical model of body factor in short channel bulk MOSFETs for low voltage applications

An analytical model to study the degradation of body factor ( γ) and subthreshold factor ( S) of short channel bulk MOSFETs have been developed and the expression for body factor of short channel devices is derived. Modified relation between S and γ factors has also been obtained and a correction fa...

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Bibliographic Details
Published in:	Solid-state electronics Vol. 48; no. 10; pp. 1763 - 1766
Main Authors:	Kumar, Anil, Nagumo, Toshiharu, Tsutsui, Gen, Hiramoto, Toshiro
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-10-2004
Subjects:	Body factor MOSFETs Subthreshold factor MOSFETs Body factor Subthreshold factor
Online Access:	Get full text
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Summary:	An analytical model to study the degradation of body factor ( γ) and subthreshold factor ( S) of short channel bulk MOSFETs have been developed and the expression for body factor of short channel devices is derived. Modified relation between S and γ factors has also been obtained and a correction factor γ s is found which maintained the conventional relation in spite of the degradation of these two parameters in short channel devices. Results obtained are found in good approximation with 2D simulated data.
ISSN:	0038-1101 1879-2405
DOI:	10.1016/j.sse.2004.05.011